Proceedings of the Optical Society of Korea Conference (한국광학회:학술대회논문집)
- 2009.02a
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- Pages.525-526
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- 2009
Effect of rapid thermal annealing on InGaP/InGaAlP multiple quantum well structures grown by molecular beam epitaxy
MBE 성장 InGaP/InGaAlP 다중양자우물의 RTA 에 의한 PL 특성 변화
- Published : 2009.02.12
Abstract
we investigated the effect of rapid thermal annealing (RTA) temperature on photoluminescence (PL) of 635 nm InGaP/InGaAlP multiple quantum well structure. RTA is performed with the quantum well structure with 5.5 nm of well width. The highest PL peak intensity is shown at 1 min. of RTA at
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