Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2009.06a
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- Pages.415-416
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- 2009
Enhancement of nonvolatile memory of performance using CRESTED tunneling barrier and high-k charge trap/bloking oxide layers
Engineered tunnel barrier가 적용되고 전화포획층으로 $HfO_2$ 를 가진 비휘발성 메모리 소자의 특성 향상
- Park, Goon-Ho (Kwangwoon Univ.) ;
- You, Hee-Wook (Kwangwoon Univ.) ;
- Oh, Se-Man (Kwangwoon Univ.) ;
- Kim, Min-Soo (Kwangwoon Univ.) ;
- Jung, Jong-Wan (Sejong Univ.) ;
- Lee, Young-Hie (Kwangwoon Univ.) ;
- Chung, Hong-Bay (Kwangwoon Univ.) ;
- Cho, Won-Ju (Kwangwoon Univ.)
- 박군호 (광운대학교) ;
- 유희욱 (광운대학교) ;
- 오세만 (광운대학교) ;
- 김민수 (광운대학교) ;
- 정종완 (세종대학교) ;
- 이영희 (광운대학교) ;
- 정홍배 (광운대학교) ;
- 조원주 (광운대학교)
- Published : 2009.06.18
Abstract
The tunnel barrier engineered charge trap flash (TBE-CTF) non-volatile memory using CRESTED tunneling barrier was fabricated by stacking thin