Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Enhancement of nonvolatile memory of performance using CRESTED tunneling barrier and high-k charge trap/bloking oxide layers

Engineered tunnel barrier가 적용되고 전화포획층으로 $HfO_2$를 가진 비휘발성 메모리 소자의 특성 향상

  • Published : 2009.06.18
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Abstract

The tunnel barrier engineered charge trap flash (TBE-CTF) non-volatile memory using CRESTED tunneling barrier was fabricated by stacking thin $Si_3N_4$ and $SiO_2$ dielectric layers. Moreover, high-k based $HfO_2$ charge trap layer and $Al_2O_3$ blocking layer were used for further improvement of the NVM (non-volatile memory) performances. The programming/erasing speed, endurance and data retention of TBE-CTF memory was evaluated.

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