한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)

한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
권호 표지

$Si_3N_4$ 페시베이션 박막이 유기발광다이오드 소자에 주는 영향 연구

The Study of Silicon Nitride Passivation Layer on OLED

  • 박일흥 (나노기술직접센터, 포항공과대학교) ;
  • 김관도 (나노기술직접센터, 포항공과대학교) ;
  • 신훈규 (나노기술직접센터, 포항공과대학교) ;
  • 윤재경 (화학공학과, 포항공과대학교) ;
  • 윤원민 (화학공학과, 포항공과대학교) ;
  • 권오관 (화학공학과, 포항공과대학교)
  • Park, Il-Houng (Dept. of Display, National Center for Nanomaterials Technology(NCNT)) ;
  • Kim, Kwan-Do (Dept. of Display, National Center for Nanomaterials Technology(NCNT)) ;
  • Shin, Hoon-Kyu (Dept. of Display, National Center for Nanomaterials Technology(NCNT)) ;
  • Yoon, Jae-Kyoung (Dept. of Chemical Engineering, Pohang University of Science and Technology) ;
  • Yun, Won-Min (Dept. of Chemical Engineering, Pohang University of Science and Technology) ;
  • Kwon, Oh-Kwan (Dept. of Chemical Engineering, Pohang University of Science and Technology)
  • 발행 : 2009.06.18
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초록

In this paper, we have deposited silicon nitride films by plasma-enhanced chemical vapor deposition (PECVD). For films deposited under optimized conditions, the mechanism of plasma-enhanced vapor deposition of silicon nitride is studied by varying process parameters such as rf power, gas ratio, and chamber pressure. It was demonstrated that organic light-emitting diode(OLEDs) were fabricated with the inorganic passivation layer processing. We have been studied the inorganic film encapsulation effect for organic light-emitting diodes (OLED). To evaluate the passivation layer, we have carried out the fabrication of OLEDs and investigate with luminescence and MOCON.

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