한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2009년도 하계학술대회 논문집
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- Pages.323-324
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- 2009
소스/드레인 전극의 두께변화에 따른 TIPS-pentacene 트랜지스터의 전기적 특성 연구
Study on die electric characteristics of TIPS-pentacene transistors with variation of electrode thickness
- Yang, Jin-Woo (Dept. of Information Display, Hongik University) ;
- Hyung, Gun-Woo (Dept. of Materials Science and Engineering, Hongik University) ;
- Kim, Young-Kwan (Dept. of Information Display, Hongik University)
- 발행 : 2009.06.18
초록
We investigated the electrical properties of tris-isopropylsilylethynyl (TIPS)-pentacene organic thin-film transistors (OTFTs) employing Ni/Ag source/drain electrodes. The gap height between the gate insulator and S/D electrode was controlled by changing the thickness of Ag under-layer(20, 30, 40 and 50nm). After evaporating the Ni under-layer, TIPS pentacene channel material was dropping the gap between the gate insulator and SID electrodes. The electrical proprieties of OTFT such as filed-effect mobility, on/off ratio, threshold voltage and subthreshold slope were significantly influenced by the gap height.