한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2009년도 하계학술대회 논문집
- /
- Pages.285-287
- /
- 2009
780nm Monolithic 4-Beam 레이저 다이오드의 Droop 특성 개선
The Improvement of Droop Characteristic of 780nm Monolithic 4-Beam Laser Diode
- Hong, Hyun-Kwon (Quantum Semiconductor International Co., Ltd.) ;
- Kim, Ji-Ho (Quantum Semiconductor International Co., Ltd.) ;
- Ji, You-Sang (Quantum Semiconductor International Co., Ltd.) ;
- Seong, Yeong-Un (Quantum Semiconductor International Co., Ltd.) ;
- Lee, Sang-Don (Quantum Semiconductor International Co., Ltd.)
- 발행 : 2009.06.18
초록
When the laser diode is operated with continuous current, the light intensity from the laser diode deceases with time due to the temperature rise in the active layer. The phenomena, which is often called as DROOP, should be minimized in order to be used as a light source for the laser beam printer. We experimently examined the influences of the laser parameters such as threshold current, differential quantum efficiency on droop. It was found that decreasing the differential quantum efficiency of the laser diode is the effective way to minimize droop.