Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2009.06a
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- Pages.80-80
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- 2009
Preparation and Characterization of MFIS Using PT/BFO/$HFO_2$ /Si Structures
- Kim, Kwi-Junga (Department of Electrical and Computer Engineering, University of Seoul) ;
- Jeong, Shin-Woo (Department of Electrical and Computer Engineering, University of Seoul) ;
- Han, Hui-Seong (Department of Electrical and Computer Engineering, University of Seoul) ;
- Han, Dae-Hee (Department of Electrical and Computer Engineering, University of Seoul) ;
- Jeon, Ho-Seung (Department of Electrical and Computer Engineering, University of Seoul) ;
- Im, Jong-Hyun (Department of Electrical and Computer Engineering, University of Seoul) ;
- Park, Byung-Eun (Department of Electrical and Computer Engineering, University of Seoul)
- Published : 2009.06.18
Abstract
Recently, multiferroics have attracted much attention due to their numorous potentials. In this work, we attemped to utilize the multiferroics as an alternative material for ferroelectrics. Ferroelectric materials have been stadied to ferroelectric random access memories, however, some inevitable problems prevent it from inplementation. multiferroics shows a ferroelectricity and has low process temperature