Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2009.06a
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- Pages.74-74
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- 2009
The etch characteristic of TiN thin films by using inductively coupled plasma
유도결합 플라즈마를 이용한 TiN 박막의 식각 특성 연구
- Park, Jung-Soo (Chung-Ang University) ;
- Kim, Dong-Pyo (Chung-Ang University) ;
- Um, Doo-Seung (Chung-Ang University) ;
- Woo, Jong-Chang (Chung-Ang University) ;
- Heo, Kyung-Moo (Chung-Ang University) ;
- Wi, Jae-Hyung (Chung-Ang University) ;
- Kim, Chang-Il
- Published : 2009.06.18
Abstract
Titanium nitride has been used as hardmask for semiconductor process, capacitor of MIM type and diffusion barrier of DRAM, due to it's low resistivity, thermodynamic stability and diffusion coefficient. Characteristics of the TiN film are high intensity and chemical stability. The TiN film also has compatibility with high-k material. This study is an experimental test for better condition of TiN film etching process. The etch rate of TiN film was investigated about etching in