Characteristics of Contact resistivity on RTP annealing temperature and time after Plasma ion implant

플라즈마 이온주입 후 RTP 열처리 온도와 시간에 따른 접촉저항 특성

  • 최장훈 (경북대학교 전자전기컴퓨터공학부) ;
  • 도승우 (경북대학교 전자전기컴퓨터공학부) ;
  • 이용현 (경북대학교 전자전기컴퓨터공학부)
  • Published : 2009.06.18

Abstract

In this paper, plasma ion implant is performed with $PH_3$ gas diluted by helium gas on P-type Si wafer (100). Spike Rapid Thermal Processing(RTP) annealing performed for 30~60 sec from $800\;^{\circ}C$ to $1000\;^{\circ}C$ in $N_2+O_2$ ambient. Crystalline defect is analyzed by Transmission Electron Microscope(TEM) and Double crystal X-ray Diffraction(DXRD). Contact resistivity($\rho c$), contact resistance(Rc) and sheet resistance(Rs) are analyzed by measuring Transfer Length Method(TLM) using 4155C analysis. As annealing temperature increase, Rs decrease and ${\rho}c$ and Rc increase at temperature higher than $850\;^{\circ}C$. We achieve low Rs, ${\rho}c$ and Rc with Plasma ion implant and spike RTP.

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