Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Si기판을 이용한 대면적 CdTe 박막의 MOCVD성장

  • 김광천 (한국과학기술연구원 재료연구본부 박막재료연구센터) ;
  • 임주혁 ;
  • 유현우 ;
  • 정규호 (한국과학기술연구원 재료연구본부 박막재료연구센터) ;
  • 김현재 (연세대학교 공과대학 전기전자공학부) ;
  • 김진상 (한국과학기술연구원 재료연구본부 박막재료연구센터)
  • Published : 2009.11.12
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Abstract

CdTe(331)/Si(211) and CdTe(400)/Si(100) thin films have been grown by MOCVD(metal organic chemical vapor deposition) system for large scale of IFPAs(IR focal plane arrays). We have investigated the effect of various growth parameters on the surface morphology and structural quality. Single crystalline CdTe(331) films were grown by two stage growth method - low temperature buffer layer step and high temperature growth step. In other case, single crystal of CdTe(400) films were grown on a few atomic layer thickness of GaAs which is grown on Si(100) substrate by molecular beam epitaxy. The crystalline quality of the films was analyzed by X-ray diffraction. The surface morphology and crystal structure of CdTe films were characterized by optical microscope.

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