Non-vacuum processing of CIGS absorber layer using nanoparticle

  • Ham, Chang-Woo (Electronics and Telecommunications Research Institute) ;
  • Song, Ki-Bong (Electronics and Telecommunications Research Institute) ;
  • Suh, Jeong-Dae (Electronics and Telecommunications Research Institute) ;
  • Cho, Jung-Min (Electronics and Telecommunications Research Institute)
  • Published : 2009.11.12

Abstract

Solar cells with CIGS absorber layers have proven their suitability for high efficiency and stable low cost solar cells. We prepared and characterized particle based CIGS thin film using a non-vacuum processing. CIGS powder were obtained at $240^{\circ}C$ for 6 hours from the reaction of $CuCl_2$, $InCl_3$, $GaCl_3$, Se powder in solvent. The nanoparticle precursors were mixed with binder material. The CIGS thin film deposited on a sodalime glass. The CIGS thin film were identified to have a typical chalcopyrite tetragonal structure by using UV/Visible-spectroscopy, X-ray diffraction(XRD), Auger Electron Spectroscopy(AES), Scanning Electron Microscopy(SEM).

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