Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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ZnO와 Al 나노 입자를 이용한 나노플로팅 게이트 메모리 특성

  • 김성수 (고려대학교 전기전자전파공학과) ;
  • 박병준 (고려대학교 전기전자전파공학과) ;
  • 조경아 (고려대학교 전기전자전파공학과) ;
  • 김상식 (고려대학교 전기전자전파공학과)
  • Published : 2009.11.12
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Abstract

In this work, nonvolatile nano-floating gate memory devices were fabricated with ZnO films and Al nanoparticles using the sputtering method on a glass substrate. Al nanoparticles acted as floating gate nodes in the devices. The fabricated device exhibits a threshold voltage shift of 1.7 V.

Keywords