Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2009.11a
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- Pages.250-250
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- 2009
AAO 나노패턴을 응용한 실리콘 태양전지의 특성 연구
- Published : 2009.11.12
Abstract
The fabricated the nanostructural patterns on the surface of SiN antireflection layer of polycrystalline Si solar cell using anodic aluminum oxide (AAO) masks in an inductively coupled plasma(ICP) etching process. The AAO nanopattern mask has the hole size of about 70~75nm and lattice constant of 100~120nm. The transferred nano-patterns were observed by the scanning electron microscope (SEM). The voltage of patterned Si solar cell enhanced.