Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
권호 표지

OLED passivation에 적용하기 위한 PECVD $Al_2O_3$ 박막의 물리적 특성

  • 윤재경 (포항공과대학교 화학공학과) ;
  • 권오관 (포항공과대학교 화학공학과) ;
  • 윤원민 (포항공과대학교 화학공학과) ;
  • 신훈규 (포항나노기술집적센터) ;
  • 박찬언 (포항공과대학교 화학공학과)
  • Published : 2009.11.12
Download PDF
⟨ Previous Next ⟩

Abstract

In this work, we report the physical properties of amorphous $Al_2O_3$ thin films by plasma-enhanced chemical vapour deposition (PECVD) using trimethyl-aluminium (TMA) as the Al precursor at low temperatures. The thin films were deposited on Si substrates. The composition and the bonding structure of the amorphous $Al_2O_3$ films were studied using Fourier transform infrared spectroscopy (FT-IR), Ellipsometer and UV-visible Spectrophotometer and MOCON.

Keywords