Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2009.11a
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- Pages.172-172
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- 2009
고효율 LED 제작을 위한 비,반극성 GaN의 성장 및 결함 분석
- Gong, Bo-Hyeon ;
- Kim, Dong-Chan ;
- Kim, Yeong-Lee ;
- An, Cheol-Hyeon ;
- Bae, Yeong-Suk ;
- U, Chang-Ho ;
- Seo, Dong-Gyu ;
- Nam, Ok-Hyeon ;
- Yu, Geun-Ho ;
- Jang, Jong-Jin
- 공보현 (성균관대학교 신소재공학부) ;
- 김동찬 (성균관대학교 신소재공학부) ;
- 김영이 (성균관대학교 신소재공학부) ;
- 안철현 (성균관대학교 신소재공학부) ;
- 배영숙 (성균관대학교 신소재공학부) ;
- 우창호 (성균관대학교 신소재공학부) ;
- 서동규 (성균관대학교 신소재공학부) ;
- 남옥현 (한국산업기술대학교 나노광공학과) ;
- 유근호 (한국산업기술대학교 나노광공학과) ;
- 장종진 (한국산업기술대학교 나노광공학과)
- Published : 2009.11.12
Abstract
In this study, we presented comparative discrimination methods to identify various line and planar defects observed in nonpolar a-GaN epilayers on r-sapphire substrates. Unlike the case of conventional c-GaN, which is dominated by perfect threading dislocations, systematic identification of undistinguishable defects using transmission electron microscopy (TEM) is necessary to suppress the propagation of defects in nonpolar GaN epilayers. Cross-sectional TEM images near the [0001] zone axis revealed that perfect mixed and pure screw type dislocations are visible, while pure edge, partial dislocations, and basal stacking faults (BSFs) are not discernible. In tilted cross-sectional TEM images along the [