Fabrication of Pd/poly 3C-SiC Schottky diode hydrogen sensors

다결정 3C-SiC 마이크로 공진기의 온도 특성

This paper describes the temperature characteristics of polycrystalline 3C-SiC micro resonators. The 1.2 ${\mu}m$ and 0.4 ${\mu}m$ thick polycrystalline 3C-SiC cantilever and doubly clamped beam resonators with 60 ~ 100 ${\mu}m$ lengths were fabricated using a surface micromachining technique. Polycrystalline 3C-SiC micro resonators were actuated by piezoelectric element and their fundamental resonance was measured by a laser vibrometer in vacuum at temperature range of $25{\sim}200^{\circ}C$. The TCF(Temperature Coefficient of Frequency) of 60, 80 and 100 ${\mu}m$ long cantilever resonators were -9.79, -7.72 and -8.0 $ppm/^{\circ}C$. On the other hand, TCF of 60, 80 and 100 ${\mu}m$ long doubly clamped beam resonators were -15.74, -12.55 and -8.35 $ppm/^{\circ}C$. Therefore, polycrystalline 3C-SiC resonators are suitable with RF MEMS devices and bio/chemical sensor applications in harsh environments.