Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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LTCC기판상에 성장시킨 PZT박막의 열처리 특성연구

  • 이경천 (성균관대학교 정보통신공학부) ;
  • 황현석 (서일대학) ;
  • 우형관 (성균관대학교 정보통신공학부) ;
  • 이태용 (성균관대학교 정보통신공학부) ;
  • 허원영 (성균관대학교 정보통신공학부) ;
  • 심등 (성균관대학교 정보통신공학부) ;
  • 송준태 (성균관대학교 정보통신공학부)
  • Published : 2009.11.12
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Abstract

Recently, low temperature co-fired ceramic (LTCC) technology has gained a remarkable application potential in sensors, actuators and microsystems fields. In this study, we investigated the effects of annealing treatment on the electrical properties of $Pb(ZrTi)O_3$ (PZT) thin films deposited on LTCC substrate. The LTCC substrates with thickness of 400 ${\mu}m$ were fabricated by laminating 12 green tapes which consist of alumina and glass particle in an organic binder. The PZT thin films were deposited on Au/LTCC substrates by RF magnetron sputtering method. Then, the change of the crystallization of the films was investigated under various annealing temperatures. The results showed that the crystallization of the films were enhanced as increasing annealing temperatures. The film, annealed at $700^{\circ}C$, 3min, was well crystallized in the ferovskite structure. The structural variation of the films were analyzed by using X-Ray diffraction (XRD) and field emmision scanning electron microscopy (FESEM).

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