Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2009.11a
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- Pages.42-42
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- 2009
혼합된 PVP-PVA 유기 게이트 절연막이 유기 박막 트랜지스터의 전기적 특성에 미치는 영향에 대한 연구
- Published : 2009.11.12
Abstract
To make up for the disadvantages of PVA gate, we blend PVP(20% wt) with PVA(5% wt) as a gate material. The best ratio for the mixture was 5:5, PVP-PVA blended gate used MIM structure showed better performance in leakage current and capacitance. PVP-PVA blended gate was fabricated by spin-coating process and pentacene was used as an organic TFT channel layer by thermal evaporation. Overall OTFT performance has also increased as PVP-PVA blended gate has relatively lower leakage current and higher capacitance than pure PVA gate has.