한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2009년도 추계학술대회 논문집
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- Pages.35-35
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- 2009
후속열처리 공정을 이용한 FD Strained-SOI 1T-DRAM 소자의 동작특성 개선에 관한 연구
- 발행 : 2009.11.12
초록
Capacitorless one transistor dynamic random access memory (1T-DRAM) cells were fabricated on the fully depleted strained-silicon-on-insulator (FD sSOI) and the effects of silicon back interface state on buried oxide (BOX) layer on the memory properties were evaluated. As a result, the fabricated 1T-DRAM cells showed superior electrical characteristics and a large sensing current margin (