Proceedings of the Materials Research Society of Korea Conference (한국재료학회:학술대회논문집)
- 2009.05a
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- Pages.24.1-24.1
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- 2009
Effects of the buffer layer annealing and post annealing temperature on the structural and optical properties of ZnO nanorods grown by a hydrothermal synthesis
- Sin, Chang-Mi ;
- Ryu, Hyeok-Hyeon ;
- Lee, Jae-Yeop ;
- Heo, Ju-Hoe ;
- Park, Ju-Hyeon ;
- Lee, Tae-Min ;
- Choe, Sin-Ho ;
- Fei, Han Qi
- 신창미 (인제대학교 나노시스템공학과) ;
- 류혁현 (인제대학교 나노시스템공학과) ;
- 이재엽 (인제대학교 나노시스템공학과) ;
- 허주회 (인제대학교 나노시스템공학과) ;
- 박주현 (인제대학교 나노공학부) ;
- 이태민 (인제대학교 나노공학부) ;
- 최신호 (인제대학교 나노공학부) ;
- Published : 2009.05.21
Abstract
The zinc oxide (ZnO) material as the II-VI compound semiconductor is useful in various fields of device applications such as light-emitting diodes (LEDs), solar cells and gas sensors due to its wide direct band gap of 3.37eV and high exciton binding energy of 60meV at room temperature. In this study, the ZnO nanorods were deposited onto homogenous buffer layer/Si(100) substrates by a hydrothermal synthesis. The Effects of the buffer layer annealing and post annealing temperature on the structural and optical properties of ZnO nanorods grown by a hydrothermal synthesis were investigated. For the buffer layer annealing case, the annealed buffer layer surface became rougher with increasing of annealing temperature up to