한국재료학회:학술대회논문집 (Proceedings of the Materials Research Society of Korea Conference)
- 한국재료학회 2009년도 춘계학술발표대회
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- Pages.22.2-22.2
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- 2009
High Quality Nickel Atomic Layer Deposition for Nanoscale Contact Applications
- Kim, Woo-Hee (Department of Materials Science and Engineering, POSTECH (Pohang University of Science and Technology)) ;
- Lee, Han-Bo-Ram (Department of Materials Science and Engineering, POSTECH (Pohang University of Science and Technology)) ;
- Heo, Kwang (Department of Physics and Astronomy, Seoul National University) ;
- Hong, Seung-Hun (Department of Physics and Astronomy, Seoul National University) ;
- Kim, Hyung-Jun (Department of Materials Science and Engineering, POSTECH (Pohang University of Science and Technology))
- 발행 : 2009.05.21
초록
Currently, metal silicides become increasingly more essential part as a contact material in complimentary metal-oxide-semiconductor (CMOS). Among various silicides, NiSi has several advantages such as low resistivity against narrow line width and low Si consumption. Generally, metal silicides are formed through physical vapor deposition (PVD) of metal film, followed by annealing. Nanoscale devices require formation of contact in the inside of deep contact holes, especially for memory device. However, PVD may suffer from poor conformality in deep contact holes. Therefore, Atomic layer deposition (ALD) can be a promising method since it can produce thin films with excellent conformality and atomic scale thickness controllability through the self-saturated surface reaction. In this study, Ni thin films were deposited by thermal ALD using bis(dimethylamino-2-methyl-2-butoxo)nickel [Ni(dmamb)2] as a precursor and NH3 gas as a reactant. The Ni ALD produced pure metallic Ni films with low resistivity of 25