Effects of Fluoride dopants for $BaAl_2S_4$:Eu thin-films

  • Published : 2009.10.12

Abstract

Three different fluoride compounds were used for preparation of $BaAl_2S_4$:Eu thin-films. The emission intensity of these devices were higher than that of the thin-films deposited without fluoride materials, and the appropriate annealing temperature decreased with fluoride dopants. It is related to the fluoride compounds accelerate the crystallization of $BaAl_2S_4$ at low temperature.

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