한국정보디스플레이학회:학술대회논문집
- 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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- Pages.927-930
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- 2009
Chemical Solution Deposition of InGaZnO Thin Films As Active Channel Layers of Thin-Film Transistors
- Son, Dae-Ho (Public & Original Technology Research center, DGIST) ;
- Kim, Jung-Hye (Dept. of Chemical Engineering, Keimyung University) ;
- Kim, Dae-Hwan (Public & Original Technology Research center, DGIST) ;
- Sung, Shi-Joon (Public & Original Technology Research center, DGIST) ;
- Jung, Eun-Ae (Public & Original Technology Research center, DGIST) ;
- Kang, Jin-Kyu (Public & Original Technology Research center, DGIST) ;
- Ha, Ki-Ryong (Dept. of Chemical Engineering, Keimyung University)
- 발행 : 2009.10.12
초록
We studied the solution processes of IGZO thin films and investigated the electrical characteristics of thin film transistor (TFT) with sol-gel processed InGaZn-oxide active semiconductor layer. In particular, the effect of composition variation and post annealing temperature were studied by using solutions having various metal cation ratios to optimize transistor performance.
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