한국정보디스플레이학회:학술대회논문집

The Korean Infomation Display Society (한국정보디스플레이학회)
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Chemical Solution Deposition of InGaZnO Thin Films As Active Channel Layers of Thin-Film Transistors

  • Son, Dae-Ho (Public & Original Technology Research center, DGIST) ;
  • Kim, Jung-Hye (Dept. of Chemical Engineering, Keimyung University) ;
  • Kim, Dae-Hwan (Public & Original Technology Research center, DGIST) ;
  • Sung, Shi-Joon (Public & Original Technology Research center, DGIST) ;
  • Jung, Eun-Ae (Public & Original Technology Research center, DGIST) ;
  • Kang, Jin-Kyu (Public & Original Technology Research center, DGIST) ;
  • Ha, Ki-Ryong (Dept. of Chemical Engineering, Keimyung University)
  • Published : 2009.10.12
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Abstract

We studied the solution processes of IGZO thin films and investigated the electrical characteristics of thin film transistor (TFT) with sol-gel processed InGaZn-oxide active semiconductor layer. In particular, the effect of composition variation and post annealing temperature were studied by using solutions having various metal cation ratios to optimize transistor performance.

Keywords