한국정보디스플레이학회:학술대회논문집
- 2009.10a
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- Pages.889-892
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- 2009
Fabrication of gate electrode for OTFT using screen-printing and wet-etching with nano-silver ink
- Lee, Mi-Young (Media device lab, Dong-A University) ;
- Song, Chung-Kun (Media device lab, Dong-A University)
- Published : 2009.10.12
Abstract
We have developed a practical printing technology for the gate electrode of organic thin film transistors(OTFTs) by combining screen-printing with wet-etching process using nano-silver ink as a conducting material. The screen-printed and wet-etched Ag electrode exhibited a minimum line width of ~5 um, the thickness of ~65 nm, and a resistivity of