한국정보디스플레이학회:학술대회논문집
- 2009.10a
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- Pages.524-526
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- 2009
5.1: Control of Electrical Characteristics of Solution Processed TFTs Depending on InGaZnO Composition Variation
- Kim, Gun-Hee (School of Electrical and Electronic Engineering, Yonsei University) ;
- Jeong, Woong-Hee (School of Electrical and Electronic Engineering, Yonsei University) ;
- Ahn, Byung-Du (School of Electrical and Electronic Engineering, Yonsei University) ;
- Shin, Hyun-Soo (School of Electrical and Electronic Engineering, Yonsei University) ;
- Kim, Hyun-Jae (School of Electrical and Electronic Engineering, Yonsei University)
- Published : 2009.10.12
Abstract
The effects of In and Ga contents on characteristics of InGaZnO (IGZO) films grown by a sol-gel method and their thin film transistors (TFTs) have been investigated. Excess In incorporation into IGZO enhances the field effect mobilities of the TFTs due to the increase in conducting path ways, and decreases the grain size and the surface roughness of the films because more
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