The Research of Ni/Cu/Ag Contact Solar Cells for Low Cost & High Efficiency in Crystalline Solar Cells

결정질 실리콘 태양전지의 저가 고 효율화를 위한 Ni/Cu/Ag 전극 태양전지

  • Cho, Kyeong-Yeon (Strategic Energy Research Institute, Sejong University) ;
  • Lee, Ji-Hun (Strategic Energy Research Institute, Sejong University) ;
  • Lee, Soo-Hong (Strategic Energy Research Institute, Sejong University)
  • 조경연 (세종대학교 전략에너지 연구소) ;
  • 이지훈 (세종대학교 전략에너지 연구소) ;
  • 이수홍 (세종대학교 전략에너지 연구소)
  • Published : 2009.04.10

Abstract

In high-efficiency crystalline silicon solar cells, If high-efficiency solar cells are to be commercialized. It is need to develop superior contact formation method and material that can be inexpensive and simple without degradation of the solar cells ability. For reason of plated metallic contact is not only high metallic purity but also inexpensive manufacture. It is available to apply mass production. Especially, Nickel, Copper and Silver are applied widely in various electronic manufactures as easily formation is available by plating. The metallic contact system of silicon solar cell must have several properties, such as low contact resistance, easy application and good adhesion. Ni is shown to be a suitable barrier to Cu diffusion as well as desirable contact metal to silicon. Nickel monosilicide(NiSi) has been suggested as a suitable silicide due to its lower resistivity, lower sintering temperature and lower layer stress than $TiSi_2$. Copper and Silver can be plated by electro & light-induced plating method. Light-induced plating makes use the photovoltaic effect of solar cell to deposite the metal on the front contact. The cell is immersed into the electrolytic plating bath and irradiated at the front side by light source, which leads to a current density in the front side grid. Electroless plated Ni/ Electro&light-induced plated Cu/ Light-induced plated Ag contact solar cells result in an energy conversion efficiency of 14.68 % on $0.2{\sim}0.6{\Omega}{\cdot}cm,\;20{\times}20mm^2$, CZ(Czochralski) wafer.

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