$ZrO_2$ 게이트 절연막을 이용한 산화물 박막 트랜지스터의 전기적 특성

Electrical properties of oxide thin film transistor with $ZrO_2$ gate dielectrics

  • 발행 : 2009.07.14

초록

In this paper we have presented recent studies concerning the high performance oxide thin film transistor (TFT) with a-IGZO channel and $ZrO_2$ gate dielectrics. The a-IGZO TFT is fully fabricated at room-temperature without any thermal treatments. The $ZrO_2$ is one of the most promising high-k materials with high capacitance originated from the high dielectric constant. The a-IGZO TFT with $ZrO_2$ shows high performance exhibiting high field effect mobility of $39.82\;cm^2$/Vs and high on-current of 2.52 mA at 10V.

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