Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)
- 2009.07a
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- Pages.1334_1335
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- 2009
Electrical properties of oxide thin film transistor with $ZrO_2$ gate dielectrics
$ZrO_2$ 게이트 절연막을 이용한 산화물 박막 트랜지스터의 전기적 특성
- Debnath, Pulak Chandra (Korea Institute of Science & Technology) ;
- Lee, Jae-Sang (Korea Institute of Science & Technology) ;
- Lee, Sang-Yeol (Korea Institute of Science & Technology)
- 푸락 천드러 데프낫 (한국과학기술연구원) ;
- 이재상 (한국과학기술연구원) ;
- 이상렬 (한국과학기술연구원)
- Published : 2009.07.14
Abstract
In this paper we have presented recent studies concerning the high performance oxide thin film transistor (TFT) with a-IGZO channel and
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