Dielectric barrier discharge 플라즈마 펄스 레이져 증착법을 통해 성장한 nitrogen 도핑 된 산화아연 박막의 광학적 특성

Optical properties of nitrogen doped ZnO thin films grown by dielectric barrier discharge plasma-assisted pulsed laser deposition

We have grown, for the first time to our knowledge, N-doped ZnO thin films on sapphire substrate by employing novel dielectric barrier discharge in pulsed laser deposition (DBD-PLD). DBD guarantees an effective way for massive in-situ generation of N-plasma under the conventional PLD process condition. Low-temperature photoluminescence spectra of the N-doped ZnO film provided near band-edge emission after thermal annealing process. The emission peak was resolved by Gaussian fitting to find a dominant acceptor-bound exciton peak ($A^0X$) that indicates the successful p-type doping of ZnO with N.