Photoluminescence chracteristics of SiN$_x$ thin film deposited by PECVD at low temperature

Lee, Kyung-Su (Department of Nano Science & Technology, University of Seoul) ;
Kim, Eun-Kyeom (Department of Nano Engineering, University of Seoul) ;
Kim, Kyong-Min (Department of Nano Engineering, University of Seoul) ;
Son, Dae-Ho (Department of Nano Science & Technology, University of Seoul) ;
Kim, Jeong-Ho (Department of Nano Science & Technology, University of Seoul) ;
Lee, Kyoung-Min (Department of Nano Science & Technology, University of Seoul) ;
Han, Moon-Sup (Department of Physics, University of Seoul) ;
Won, Sung-Hwan (Department of Nano Science & Technology, University of Seoul) ;
Sok, Jung-Hyun (Department of Nano Science & Technology, University of Seoul) ;
Hong, Wan-Shick (Department of Nano Science & Technology, University of Seoul) ;
Park, Kyoung-Wan (Department of Nano Science & Technology, University of Seoul)