Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2008.04a
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- Pages.65-66
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- 2008
Photoluminescence properties of N-doped and nominally undoped p-type ZnO thin films
- Jin, Hu-Jie (School of Electrical Electronic and Information Engineering, WRISS, Wonkwang University) ;
- Jeong, Yun-Hwan (School of Electrical Electronic and Information Engineering, WRISS, Wonkwang University) ;
- Park, Choon-Bae (School of Electrical Electronic and Information Engineering, WRISS, Wonkwang University)
- Published : 2008.04.25
Abstract
The realization and origin of p-type ZnO are main issue for photoelectronic devices based on ZnO material. N-doped and nominally undoped p-type ZnO films were achieved on silicon (100) and homo-buffer layers by RF magnetron sputtering and post in-situ annealing. The undoped film shows high hole mobility of 1201