Passivation Thickness Dependent Electro-Optic Characteristics of the Fringe Field Switching (FFS) Mode using the Liquid Crystal with Positive Dielectric Anisotropy

양의 액정을 이용한 FFS모드에서 유전층 두께에 따른 전기광학적 특성 연구

  • Jung, Jun-Ho (Department of Polymer.Nano Science and Technology, Chonbuk National University) ;
  • Park, Ji-Woong (Department of Polymer.Nano Science and Technology, Chonbuk National University) ;
  • An, Young-Joo (Department of Polymer.Nano Science and Technology, Chonbuk National University) ;
  • Kim, Mi-Young (Department of Polymer.Nano Science and Technology, Chonbuk National University) ;
  • Lee, Seung-Hee (Department of Polymer.Nano Science and Technology, Chonbuk National University)
  • 정준호 (전북대학교 고분자.나노 공학과) ;
  • 박지웅 (전북대학교 고분자.나노 공학과) ;
  • 안영주 (전북대학교 고분자.나노 공학과) ;
  • 김미영 (전북대학교 고분자.나노 공학과) ;
  • 이승희 (전북대학교 고분자.나노 공학과)
  • Published : 2008.04.25

Abstract

We have studied electro-optic characteristics as a function of passivation thickness$(t_p)$ in the fringe-field swiching (FFS) mode using the LC with positive dielectric anisotropy. When $t_p$ is increased from $0.29{\mu}m$ to $3.0{\mu}m$, a maximum transmittance is slightly increased to $2{\mu}m$. However, operating voltage is continuously increased up to above 11v. We found that the tilt angle is decreased between the edge of pixel electrode and the center of each pixel electrode. In the FFS mode using the liquid crystal with positive dielectric anisotropy, transmittance is affected by the tilt angle. When tilt angle is increased, transmittance become decrease. Therefore, in the FFS device, a low tilt angle is favored for high transmittance. It is demonstrated that the suitable passivation thickness make a tilt angle decreased.

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