한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2008년도 춘계학술대회 및 기술 세미나 논문집 디스플레이 광소자
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- Pages.39-40
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- 2008
Bottom Gate IGZO 박막트랜지스터를 이용한 투명 AMOLED 패널 제작
AMOLED Panel Using Transparent Bottom Gate IGZO TFT
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조두희
(한국전자통신연구원 투명전자소자팀) ;
- 양신혁 (한국전자통신연구원 투명전자소자팀) ;
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변춘원
(한국전자통신연구원 투명전자소자팀) ;
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신재헌
(한국전자통신연구원 투명전자소자팀) ;
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이정익
(한국전자통신연구원 투명전자소자팀) ;
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박은숙
(한국전자통신연구원 투명전자소자팀) ;
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권오상
(한국전자통신연구원 투명전자소자팀) ;
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황치선
(한국전자통신연구원 투명전자소자팀) ;
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추혜용
(한국전자통신연구원 투명전자소자팀) ;
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조경익
(한국전자통신연구원 투명전자소자팀)
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Cho, D.H.
(Transparent Electronics Team, Electronics and Communications Research Institute) ;
- Yang, S.H. (Transparent Electronics Team, Electronics and Communications Research Institute) ;
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Byun, C.W.
(Transparent Electronics Team, Electronics and Communications Research Institute) ;
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Shin, J.H.
(Transparent Electronics Team, Electronics and Communications Research Institute) ;
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Lee, J.I.
(Transparent Electronics Team, Electronics and Communications Research Institute) ;
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Park, E.S.
(Transparent Electronics Team, Electronics and Communications Research Institute) ;
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Kwon, O.S.
(Transparent Electronics Team, Electronics and Communications Research Institute) ;
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Hwang, C.S.
(Transparent Electronics Team, Electronics and Communications Research Institute) ;
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Chu, H.Y.
(Transparent Electronics Team, Electronics and Communications Research Institute) ;
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Cho, K.I.
(Transparent Electronics Team, Electronics and Communications Research Institute)
- 발행 : 2008.04.25
초록
We have examined post-annealing and passivation for the transparent bottom gate IGZO TFT having an inverse co-planar structure. The oxygen-vacuum two step annealing enhanced the field effect mobility up to 18