Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
권호 표지

The Properties of $CuInSe_2$ Thin Films by DC/RF Magnetron Sputtering and Thermal Evaporation Method

  • Jeong, Woon-Jo (Optical Engineering Research Institute, Mokpo National Univ.) ;
  • Ahn, Ho-Geun (Dept. of Chemical Engineering, Sunchon National Univ.) ;
  • Kim, Young-Jun (Dept. of Electrical Engineering, Mokpo National Univ.) ;
  • Yang, Hyeon-Hun (Dept. of Electrical Engineering, Mokpo National Univ.) ;
  • Park, Gye-Choon (Dept. of Electrical Engineering, Mokpo National Univ.)
  • Published : 2008.04.17
Download PDF
⟨ Previous Next ⟩

Abstract

$CuInSe_2$ thin film were prepared in order to clarify optimum conditions for growth of the thin film depending upon process, and then by changing a number of deposition conditions and heat treatment conditions variously, structural and electrical characteristics were measured. Thereby, optimum process variables were derived. For the manufacture of the $CuInSe_2$, Cu, In and Se were deposited in the named order. Among them, Cu and In were deposited by using the sputtering method in consideration of their adhesive force to the substrate, and the DC/RF power was controlled so that the composition of Cu and In might be 1:1, while the annealing temperature having an effect on the quality of the thin film was changed from $200^{\circ}C$ to $350^{\circ}C$ at intervals of $50^{\circ}C$.

Keywords