Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2008.06a
- /
- Pages.232-233
- /
- 2008
Electrical characteristics of SiC schottky diodes treated by the various dry etch methods for a damaged surface
변형막 식각 방법에 따른 탄화규소 쇼트키 다이오드의 전기적 특성
- Choi, Young-Min (KyungNam University) ;
-
Kang, In-Ho
(Korea Electrotechnology Research Institute (KERI))
;
- Bahng, Wook (Korea Electrotechnology Research Institute (KERI)) ;
-
Joo, Sung-Jae
(Korea Electrotechnology Research Institute (KERI))
;
-
Kim, Sang-Cheol
(Korea Electrotechnology Research Institute (KERI))
;
-
Kim, Nam-Kyun
(Korea Electrotechnology Research Institute (KERI))
;
- Kim, Sung-Jin (KyungNam University)
- 최영민 (경남대학교) ;
-
강인호
(한국전기연구원)
;
- 방욱 (한국전기연구원) ;
-
주성재
(한국전기연구원)
;
-
김상철
(한국전기연구원)
;
-
김남균
(한국전기연구원)
;
- 김성진 (경남대학교)
- Published : 2008.06.19
Abstract
The 4H-SiC schottky diodes treated by the various dry etch methods were fabricated and electrically characterized. The post etch process including an Inductively Coupled Plasma(ICP) etch and a Neutron Beam Etch(NBE) was performed after a high-temperature activation annealing without graphite cap in order to eliminate the damaged surface generated during the activation annealing. The reverse leakage current of diode treated by ICP was 1/35 times lower than that of the diode without any post etch at the anode bias of -100V, while the reverse leakage current of diode treated by NBE was 1/44 times lower at the same bias.