한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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- Pages.228-228
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- 2008
고밀도 산소 플라즈마 처리된 폴리머 기판에 성장시킨 CdS 박막의 특성 분석
Structural Properties of chemically deposited CdS Films on plasma treated PET
- Song, Woo-Chang (Chungju National Univ.) ;
- Park, Seung-Beom (Chungju National Univ.) ;
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Lim, Dong-Gun
(Chungju National Univ.) ;
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Lee, Jae-Hyeong
(Kunsan National Univ.) ;
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Park, Jong-Kuk
(Kangwon National Univ.) ;
- Park, Ha-Yong (Kangwon National Univ.) ;
- Kim, Jeong-Ho (Kyushu Institute of Technology)
- 발행 : 2008.06.19
초록
CdS is II-VI semiconductor with a wide band gap of approximately 2.42 eV. CdS is the most popularly employed heterojunction partner to p-CdTe due to its similar chemical properties. In this work, to improvement of the surface properties of the CdS films, PET substrate is treated by high density