한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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- Pages.182-183
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- 2008
고분자 완충층을 이용한 유기박막트랜지스터
Organic Thin-Film Transistors with Polymer Buffer Layer
- 최학범 (홍익대학교 정보디스플레이공학과) ;
-
형건우
(홍익대학교 신소재공학과) ;
- 박일홍 (홍익대학교 정보디스플레이공학과) ;
- 황선욱 (홍익대학교 정보디스플레이공학과) ;
-
김영관
(홍익대학교 정보디스플레이공학과)
- Choi, Hak-Bum (Dept. of Information Display, Hongik University) ;
-
Hyung, Gun-Woo
(Dept. of Materials Science and Engineering, Hongik University) ;
- Park, Il-Houng (Dept. of Information Display, Hongik University) ;
- Hwang, Seon-Wook (Dept. of Information Display, Hongik University) ;
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Kim, Young-Kwan
(Dept. of Information Display, Hongik University)
- 발행 : 2008.06.19
초록
We fabricated a pentacene thin film transistor with Poly-vinylalcohol (PVA) as a dielectric. And we used Poly(9-vinylcarbazole) (PVK) as a buffer layer to improve the electrical characteristics. PVK is a material used often host material for OLED device, as it has good film forming properties, large HOMO-LUMO(highest occupied molecular orbital-lowest unoccupied molecular orbital) bandgap. The performance of a OTFT device with PVA gate dielectric was improved by using the PVK. Field effect mobility, threshold voltage, and on-off current ratio of device with PVK layer were about 0.6