한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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- Pages.118-118
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- 2008
산화막 CMP에서 세리아 입자의 패드 표면누적과 재료제거 관계
Correlation between Ceria abrasive accumulation on pad surface and Material Removal in Oxide CMP
- Kim, Young-Jin (Precision Manufacturing System Div., Graduate School of Mechanical Engineering, Pusan National Univ.) ;
- Park, Boum-Young (Mechanical Engineering Dept., Pusan National Univ.) ;
- Jeong, Hae-Do (Mechanical Engineering Dept., Pusan National Univ.)
- 발행 : 2008.06.19
초록
The oxide CMP has been applied to interlayer dielectric(ILD) and shallow trench isolation (STI) in chip fabrication. Recently the slurry used in oxide CMP being changed from silica slurry to ceria (cerium dioxide) slurry particularly in STI CMP, because the material selectivity of ceria slurry is better than material selectivity of silica slurry. Moreover, the ceria slurry has good a planarization efficiency, compared with silica slurry. However ceria abrasives make a material removal rate too high at the region of wafer center. Then we focuses on why profile of material removal rate is convex. The material removal rate sharply increased to 3216
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