Characteristics of polycrystalline 3C-SiC micro resonator

다결정 3C-SiC 마이크로 공진기의 특성

  • 이태원 (울산대학교 전기전자정보시스템공학부) ;
  • 정귀상 (울산대학교 전기전자정보시스템공학부)
  • Published : 2008.06.19

Abstract

Micro resonators have been actively investigated for bio/chemical sensors and RF M/NEMS devices. Among various materials, SiC is a very promising material for micro/nano resonators since the ratio of its Young's modulus, E, to mass density, $\rho$, is significantly higher than other semiconductor materials, such as, Si and GaAs. Polycrystalline 3C-SiC cantilever with different lengths were fabricated using a surface micromachining technique. Polycrystalline 3C-SiC micro resonators were actuated by piezoelectric element and its fundamental resonance was measured by a laser vibrometer in air and vacuum at room temperature, respectively. For the cantilever with $100{\mu}m$ length, $10{\mu}m$width and $1.3{\mu}m$ thickness, the fundamental frequency appeared at 147.2 kHz.

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