Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2008.06a
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- Pages.67-68
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- 2008
The Fabrication of Packaged 4H-SiC 2kV power PiN diode and Its Electrical Characterization
탄화규소 (4H-SiC) 기반 패키지 된 2kV PiN 파워 다이오드 제작과 전기적 특성 분석
- Song, Jae-Yeol (Dongeui University) ;
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Kang, In-Ho
(Korea Electrotechnology Research Institute (KERI)) ;
- Bahng, Wook (Korea Electrotechnology Research Institute (KERI)) ;
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Joo, Sung-Jae
(Korea Electrotechnology Research Institute (KERI)) ;
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Kim, Sang-Cheol
(Korea Electrotechnology Research Institute (KERI)) ;
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Kim, Nam-Kyun
(Korea Electrotechnology Research Institute (KERI)) ;
- Lee, Yong-Jae (Dongeui University)
- 송재열 (동의대학교 전자공학과) ;
-
강인호
(한국전기연구원) ;
- 방욱 (한국전기연구원) ;
-
주성재
(한국전기연구원) ;
-
김상철
(한국전기연구원) ;
-
김남균
(한국전기연구원) ;
- 이용재 (동의대학교 전자공학과)
- Published : 2008.06.19
Abstract
In this study we have developed a packaged silicon carbide power diode with blocking voltage of 2kV. PiN diodes with 7 field limiting rings (FLRs) as an edge termination were fabricated on a 4H-SiC wafer with