A study for thermal and electrical properties of Ge-Se-Te Chalcogenide materials

Ge-Se-Te Chalcogenide 물질의 열적, 전기적 특성에 관한 연구

  • Nam, Ki-Hyun (Department of Electrical material engineering, Kwangwoon Univ.) ;
  • Park, Hyung-Kwan (Department of Electrical material engineering, Kwangwoon Univ.) ;
  • Kim, Jae-Hoon (Department of Electrical material engineering, Kwangwoon Univ.) ;
  • Koo, Sang-Mo (Department of Electrical material engineering, Kwangwoon Univ.) ;
  • Chung, Hong-Bay (Department of Electrical material engineering, Kwangwoon Univ.)
  • 남기현 (광운대학교 전자재료공학과) ;
  • 박형관 (광운대학교 전자재료공학과) ;
  • 김재훈 (광운대학교 전자재료공학과) ;
  • 구상모 (광운대학교 전자재료공학과) ;
  • 정홍배 (광운대학교 전자재료공학과)
  • Published : 2008.06.19

Abstract

$Ge_1Se_1Te_2$ chalcogenide amorphous materials was prepared by the conventional melt-quenching method. Samples were prepared by e-beam evaporator system and thermal evaporator technique. The thermal properties were investigated in the temperature range 300K-400K and the electrical properties were studied in the voltage range from 0V to 3V below the corresponding glass trasition temperature. The obtained results agree with the electrothermal model for Phase-Change Random Access Memory.

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