Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2008.11a
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- Pages.363-363
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- 2008
Plasma Etching Characteristics of Sapphire Substrate using $BCl_3$ -based Inductively Coupled Plasma
$BCl_3$ 계열 유도결합 플라즈마를 이용한 사파이어 기판의 식각 특성
- Kim, Dong-Pyo (School of Electrical and Electronics Engineering, Chung-Ang Univ.) ;
- Woo, Jong-Chang (School of Electrical and Electronics Engineering, Chung-Ang Univ.) ;
- Um, Doo-Seng (School of Electrical and Electronics Engineering, Chung-Ang Univ.) ;
- Yang, Xue (School of Electrical and Electronics Engineering, Chung-Ang Univ.) ;
- Kim, Chang-Il (School of Electrical and Electronics Engineering, Chung-Ang Univ.)
- 김동표 (전자전기공학부, 중앙대학교) ;
- 우종창 (전자전기공학부, 중앙대학교) ;
- 엄두승 (전자전기공학부, 중앙대학교) ;
- 양설 (전자전기공학부, 중앙대학교) ;
- 김창일 (전자전기공학부, 중앙대학교)
- Published : 2008.11.06
Abstract
The development of dry etching process for sapphire wafer with plasma has been key issues for the opto-electric devices. The challenges are increasing control and obtaining low plasma induced-damage because an unwanted scattering of radiation is caused by the spatial disorder of pattern and variation of surface roughness. The plasma-induced damages during plasma etching process can be classified as impurity contamination of residual etch products or bonding disruption in lattice due to charged particle bombardment. Therefor, fine pattern technology with low damaged etching process and high etch rate are urgently needed. Until now, there are a lot of reports on the etching of sapphire wafer with using