한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
- /
- Pages.276-276
- /
- 2008
Magnetron sputtering을 이용한 ITO/Ni/ITO 박막의 전기광학적 특성 연구
The optoelectrical properties of ITO/Ni/ITO films prepared with a magnetron sputtering
-
Chae, Joo-Hyun
(School of Materials science and Engineering, Ulsan Univ.) ;
- Park, Ji-Hye (School of Materials science and Engineering, Ulsan Univ.) ;
-
Kim, Dea-Il
(School of Materials science and Engineering, Ulsan Univ.)
- 발행 : 2008.11.06
초록
Transparent and conducting indium tin oxide (ITO) and ITO/Nickel/ITO(INI) multilayered films were prepared on glass substrates by a magnetron sputtering without intentional substrate heating. The RF(13.56MHz) and DC power were applied to ITO and Nickel target, respectively. The thickness of ITO, Ni and ITO films were kept constantly at 50, 5 and 45 nm. In order to consider the effect of post deposition vacuum annealing in vacuum on the physical and optoeletrical properties of INI films, optical transmittance, electrical resistivity, crystallinity of the films were analyzed. From the observed result, it may conclude that the optoelectrical properties of the INI films were dependent on the post deposition annealing. For the INI films annealed at