한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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- Pages.145-145
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- 2008
$Cl_2/BCl_3$ /Ar 유도 결합 플라즈마에서 온도에 따른 $ZrO_2$ 박막의 식각
Temperature Dependence on Dry Etching of $ZrO_2$ Thin Films in $Cl_2/BCl_3$ /Ar Inductively Coupled Plasma
- Yang, Xue (Chung-Ang Univ.) ;
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Kim, Dong-Pyo
(Chung-Ang Univ.) ;
- Lee, Cheol-In (Ansan college of Technology) ;
- Um, Doo-Seung (Chung-Ang Univ.) ;
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Kim, Chang-Il
(Chung-Ang Univ.)
- 발행 : 2008.11.06
초록
High-k materials have been paid much more attention for their characteristics with high permittivity to reduce the leakage current through the scaled gate oxide. Among the high-k materials,