Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2008.11a
- /
- Pages.145-145
- /
- 2008
Temperature Dependence on Dry Etching of $ZrO_2$ Thin Films in $Cl_2/BCl_3$ /Ar Inductively Coupled Plasma
$Cl_2/BCl_3$ /Ar 유도 결합 플라즈마에서 온도에 따른 $ZrO_2$ 박막의 식각
- Yang, Xue (Chung-Ang Univ.) ;
-
Kim, Dong-Pyo
(Chung-Ang Univ.) ;
- Lee, Cheol-In (Ansan college of Technology) ;
- Um, Doo-Seung (Chung-Ang Univ.) ;
-
Kim, Chang-Il
(Chung-Ang Univ.)
- Published : 2008.11.06
Abstract
High-k materials have been paid much more attention for their characteristics with high permittivity to reduce the leakage current through the scaled gate oxide. Among the high-k materials,