한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)

한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
권호 표지

열처리 효과에 따른 GZOB 투명 전도막의 특성

Influence of Annealing treatment on the properties of B doped ZnO:Ga transparent conduction films

  • 이종환 (정보통신공학부, 성균관대학교) ;
  • 이규일 (정보통신공학부, 성균관대학교) ;
  • 유현규 (정보통신공학부, 성균관대학교) ;
  • 이태용 (정보통신공학부, 성균관대학교) ;
  • 강현일 (정보통신공학부, 성균관대학교) ;
  • 김응권 (정보통신공학부, 성균관대학교) ;
  • 송준태 (정보통신공학부, 성균관대학교)
  • Lee, Jong-Hwan (Department of Information and Communication Engineering, SungKyunKwan Univ.) ;
  • Lee, Kyu-Il (Department of Information and Communication Engineering, SungKyunKwan Univ.) ;
  • Yu, Hyun-Kyu (Department of Information and Communication Engineering, SungKyunKwan Univ.) ;
  • Lee, Tae-Yong (Department of Information and Communication Engineering, SungKyunKwan Univ.) ;
  • Kang, Hyun-Il (Department of Information and Communication Engineering, SungKyunKwan Univ.) ;
  • Kim, Eung-Kwon (Department of Information and Communication Engineering, SungKyunKwan Univ.) ;
  • Song, Joon-Tae (Department of Information and Communication Engineering, SungKyunKwan Univ.)
  • 발행 : 2008.11.06
PDF 다운로드
⟨ 이전 논문 다음 논문 ⟩

초록

Boron doped ZnO:Ga(GZOB) thin films were prepared on glass substrates by DC magnetron sputtering. Influence of the annealing treatment on the electrical and optical properties of GZOB thin films were investigated. The west resistivity of $9.6\times10^{-4}\Omega$-cm was obtained at an annealing temperature of $400^{\circ}C$. The average transmittance of the films is over 80% in the visible range. It was also shown that by introducing boron impurity into GZO system improve the uniformity, the resistivity, and thermal stability of ZnO-based conducting thin films.

키워드