Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2008.11a
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- Pages.107-108
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- 2008
Structural study of interface layers in orthorhombic-NiSi (010)/Si using density functional theory
Density Functional Theory를 이용한 orthorhombic-NiSi (010)/Si 계면 층의 구조 연구
- Kim, Dae-Hee (Dept. Materials Engineering, Korea University of Technology and Education) ;
- Kim, De-Hyun (Dept. Materials Engineering, Korea University of Technology and Education) ;
- Seo, Hwa-Il (School of Information Technology, Korea University of Technology and Education) ;
- Kim, Yeong-Cheol (Dept. Materials Engineering, Korea University of Technology and Education)
- Published : 2008.11.06
Abstract
We calculated orthorhombic-NiSi (010)/Si superstructure. Orthorhombic-NiSi was changed to tetragonal structure to be matched with Si substrate. Eight models were produced by the type of Si substrate. In the case of orthorhombic-NiSi (010)/Si (020)[00-1], it was the most favorable energetically and the shortest of the distance between two superstructures. However, in the case of orthorhombic-NiSi (010)/Si (010)[00-1], it was the most unfavorable energetically and the longest of the distance. The energy and distance of orthorhombic-NiSi (010)/Si superstructure were changed by the coordination number of Ni atom and the bond length of atom-atom at the interface.