Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2008.11a
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- Pages.83-83
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- 2008
Effect of the fixed oxide charge on the metal-oxide-silicon-on-insulator structures
metal-oxide-silicon-on-insulator 구조에서 고정 산화막 전하가 미치는 영향
- Jo, Yeong-Deuk (Kwangwoon University) ;
- Kim, Ji-Hong (Korea University) ;
- Cho, Dae-Hyung (Korea University) ;
- Moon, Byung-Moo (Korea University) ;
- Koh, Jung-Hyuk (Kwangwoon University) ;
- Ha, Jae-Geun (Kwangwoon University) ;
- Koo, Sang-Mo (Kwangwoon University)
- Published : 2008.11.06
Abstract
Metal-oxide-silicon-on-insulator (MOSOI) structures were fabricated to study the effect caused by reactive ion etching (RIE) and sacrificial oxidation process on silicon-on-insulator (SOI) layer. The MOSOI capacitors with an etch-damaged SOI layer were characterized by capacitance-voltage (C-V) measurements and compared to the sacrificial oxidation treated samples and the reference samples without etching treatment. The measured C-V curves were compared to the numerical results from 2-dimensional (2-D) simulations. The measurements revealed that the profile of C-V curves significantly changes depending on the SOI surface condition of the MOSOI capacitors. The shift in the measured C-V curves, due to the difference of the fixed oxide charge (