Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Characterization of ZnO Thin Films Grown by Pulsed Laser Deposition for Channel Layer of Transparent TFTs

펄스 레이저 증착법으로 성장된 투명 TFTs 채널층을 위한 ZnO 박막 분석

  • 이원용 (고려대학교 전자전기공학과) ;
  • 김지홍 (고려대학교 전자전기공학과) ;
  • 노지형 (고려대학교 전자전기공학과) ;
  • 조대형 (고려대학교 전자전기공학과) ;
  • 문병무 (고려대학교 전자전기공학과) ;
  • 구상모 (광운대학교 전자재료공학과)
  • Published : 2008.11.06
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Abstract

ZnO thin films were deposited on glass substrates by pulsed laser deposition (PLD) at various oxygen pressures. We observed structural, electrical and optical properties of ZnO films. Structural properties were analysed by XRD and FE-SEM. Electrical properties for applications of transparent thin film transistors (TTFTs) were measured by hall measurement using van der pauw methods at room temperature. In order to apply in transparent devices, we measured transmittance, and optical bandgap energy was calculated by Tauc's equation. The results showed that ZnO films deposited at 200mTorr oxygen pressure were applicable to channel layers of transparent TFTs. It had high hall mobilities ($52.92cm^2$/V-s) and suitable transmittance at visible wavelength region (above 80%).

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