Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2008.11a
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- Pages.12-12
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- 2008
Ruthenium Thin Films Grown by Atomic Layer Deposition
- Shin, Woong-Chul (NCD technology) ;
- Choi, Kyu-Jeong (NCD technology) ;
- Jung, Hyun-June (School of Nano Science and Engineering, Chungnam National University) ;
- Yoon, Soon-Gil (School of Nano Science and Engineering, Chungnam National University) ;
- Kim, Soo-Hyun (School of Materials Science and Engineering, Yeungnam University)
- Published : 2008.11.06
Abstract
Ruthenium is one of the noble metals having good thermal and chemical stability, low resistivity, and relatively high work function(4.71eV). Because of these good physical, chemical, and electrical properties, Ru thin films have been extensively studied for various applications in semiconductor devices such as gate electrode for FET, capacitor electrodes for dynamic random access memories(DRAMs) with high-k dielectrics such as